Structure of plasma-deposited polymorphous silicon

Plasma production of nanocrystalline silicon particles and polymorphous silicon thin films for large-area electronic devices*

Powder formation in silane plasmas has been considered as a technology drawback because it might lead to the formation of macroscopic defects in the deposited layers. Here we summarize our recent efforts in controlling the formation of powder precursors, in particular, nanocrystalline silicon particles, aiming at their incorporation in the films. Indeed, the incorporation of clusters and crysta...

Morphological, structural and photoresponse characterization of ZnO nanostructure films deposited on plasma etched silicon substrates

ZnO nanostructure films were deposited by radio frequency (RF) magnetron sputtering on etched silicon (100) substrates using dry Ar/SF6 plasma, at two etching times of 5 min and 30 min, and on non etched silicon surface. Energy dispersive X-ray (EDX) technique was employed to investigate the elements contents for etched substrates as well as ZnO films, where it is found to be stoichiometric. Su...

Silicon nitride films deposited with an electron beam created plasma

'G. C. Salter and R. E. Thomas, Solid State Electron. 20, 95 (1977). 2p. Van Halen, R. P. Mertens, R. J. Van Overstraeten, R. E. Thomas, and J. Van Meerbergen, IEEE Trans. Electron Devices ED.25, 507 (19781. -c. E. Norman and R. E. Thomas, IEEE Trans. Electron Devices ED-27, 731 (1980). 4R. E. Thomas, R. B. North, and C. E. Norman, IEEE Electron Device Lett. EDL-l, 79 (1980). Sp. DeVisschere, I...

Plasma-deposited fluoropolymer film mask for local porous silicon formation

The study of an innovative fluoropolymer masking layer for silicon anodization is proposed. Due to its high chemical resistance to hydrofluoric acid even under anodic bias, this thin film deposited by plasma has allowed the formation of deep porous silicon regions patterned on the silicon wafer. Unlike most of other masks, fluoropolymer removal after electrochemical etching is rapid and does no...

Gettering of interstitial iron in silicon by plasma-enhanced chemical vapour deposited silicon nitride films